to-92 plastic-encapsulate transistors a92 transistor (pnp) features features features features high high high high voltage voltage voltage voltage maximum maximum maximum maximum ratings ratings ratings ratings (t (t (t (t a a a a =25 =25 =25 =25 unless unless unless unless otherwise otherwise otherwise otherwise noted) noted) noted) noted) symbol symbol symbol symbol parameter parameter parameter parameter value value value value units units units units v v v v cbo cbo cbo cbo collector-base voltage -300 v v v v v ceo ceo ceo ceo collector-emitter voltage -300 v v v v v ebo ebo ebo ebo emitter-base voltage -5 v i i i i c c c c collector current -continuous -500 ma p p p p c c c c collector power dissipation 625 mw t t t t j j j j junction temperature 150 t t t t stg stg stg stg storage temperature -55-150 r r r r ? ? ? ? ja ja ja ja thermal resistance, junction to ambient 200 /mw r r r r ? ? ? ? jc jc jc jc thermal resistance, unction to case 83.3 /mw electrical electrical electrical electrical characteristics characteristics characteristics characteristics (tamb=25 (tamb=25 (tamb=25 (tamb=25 unless unless unless unless otherwise otherwise otherwise otherwise specified) specified) specified) specified) parameter parameter parameter parameter symbol test conditions min typ max unit collector-base collector-base collector-base collector-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)cbo i c =-100ua, i e =0 -300 v collector-emitter collector-emitter collector-emitter collector-emitter breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)ceo i c =-1ma, i b =0 -300 v emitter-base emitter-base emitter-base emitter-base breakdown breakdown breakdown breakdown voltage voltage voltage voltage v (br)ebo i e =-100 a, i c =0 -5 v collector collector collector collector cut-off cut-off cut-off cut-off current current current current i cbo v cb = -200 v i e =0 -0.25 a emitter emitter emitter emitter cut-off cut-off cut-off cut-off current current current current i ebo v eb = -5 v, i c =0 -0.1 a h fe(1) v ce = -10 v, ic=- 1 ma 60 dc dc dc dc current current current current gain gain gain gain h fe(2) v ce = -10v, i c = -10 ma 80 250 h fe(3) v ce = -10 v, i c = -80 ma 60 collector-emitter collector-emitter collector-emitter collector-emitter saturation saturation saturation saturation voltage voltage voltage voltage v ce (sat) i c = -20 ma, ib= -2 ma -0.2 v base-emitter base-emitter base-emitter base-emitter saturation saturation saturation saturation voltage voltage voltage voltage v be (sat) i c = -20 ma, ib= -2 ma -0.9 v transition transition transition transition frequency frequency frequency frequency f t v ce = -20 v, ic= -10 ma f = 30mhz 50 mhz classification classification classification classification of of of of h h h h fe(2) fe(2) fe(2) fe(2) rank rank rank rank a b 1 b 2 c range range range range 80-100 100-150 150-200 200-250 to-92 to-92 to-92 to-92 1. e m t t e r 2. base 3. collector 1 2 3 product specification 1 of 1 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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